This book presents the art of advanced MOSFET modeling for integrated circuit simulation and design. It provides the essential mathematical. BSIM and IC simulation. Circuit simulation and compact models. BSIM – the beginning. BSIM3 – a compact model based on new MOSFET physics. : BSIM4 and MOSFET Modeling for IC Simulation (International Series on Advanced in Solid State Electronics and Technology).

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Intrinsic charge and capacitance models. Connections of a multi-transistor stack.

BSIM – the beginning. BSIM4 – aimed for nm down to 20nm nodes. Source and drain area and perimeter calculation.

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Time discretization, equation linearization and matrix stamping. BSIM4 diode charge and capacitance [4]. Single continuous channel charge model. BSIM4 flicker noise models.

Series International series on advances in solid state electronics and technology. Channel DC current and output resistance.

BSIM4 and MOSFET modeling for IC simulation [electronic resource] in SearchWorks catalog

Saturation junction leakage current and zero-bias capacitance models. ISBN electronic bk. World Scientific Publishing Co. Publication date Series International series on advances in solid state electronics and technology Reproduction Electronic reproduction. Source and drain contact scenarios and diffusion resistances. It provides the essential mathematical and physical analyses of all the electrical, mechanical and thermal effects in MOS transistors relevant to the operation of integrated circuits.


Noise representations and parameters. Composite stamps for transient NQS model. World Scientific Full view. Imprint Singapore ; Hackensack, N. Bibliography Includes bibliographical references and index. The intent of this book ch. Gate direct-tunneling and body currents. Describe the connection issue.

Junction diode IV and CV models. Diode temperature-dependence model [4]. Physical description xix, p. Source and drain of a transistor with multiple gate fingers.

BSIM4 and MOSFET Modeling For IC Simulation

Introduction and chapter objectives. Find it at other libraries via WorldCat Limited preview. Non-quasi-static and parasitic gate and body resistances.

BSIM4 junction leakage due to trap-assisted tunneling [4]. Fringing and overlap capacitances. Charge and capacitance models. Source and drain parasitics: Channel current in subthreshold and linear operations. BSIM4 channel thermal noise models.

Circuit simulation and compact models. Gate direct-tunneling current theory and model. Responsibility Weidong Liu, Chenming Hu. Available to subscribing institutions. Special attention is paid to MOSFET characterization and model parameter extraction methodologies, making the book particularly useful for those interested or already engaged in work in the areas of semiconductor devices, compact modeling for SPICE simulation, and integrated circuit design.


Nielsen Book Data Gate intrinsic-input resistance for non-quasi-static modeling.

Output resistance in saturation region. Gate and channel geometries and materials. Physical mechanisms of diode DC currents. Review of the charge-deficit transient NQS model. SearchWorks Catalog Stanford Libraries.

The discussion covers the theory and methodology of how a MOSFET model, or semiconductor device models in general, can be implemented to be mode,ing and efficient, turning device physics theory into a production-worthy SPICE simulation model.

Skip to search Skip to main content. Velocity saturation and velocity overshoot.